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Diode 1N5819

The 1N5819 is a high-efficiency Schottky barrier rectifier diode designed for fast switching and low forward voltage drop. Unlike standard silicon diodes, the 1N5819 uses Schottky technology, which significantly reduces power loss and improves efficiency, especially in low-voltage and high-frequency applications.

Package Includes

  • 1 x 1N5819 Schottky Diode (DO-41 Package)
1.05 AED 1.05 AED (Tax included)

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Current flows in only one direction—from the Anode to the Cathode—and the cathode terminal is clearly marked with a grey band on the diode body for easy identification. Thanks to its fast response time and low forward voltage, the 1N5819 is an excellent choice for switching power supplies, DC-DC converters, polarity protection, and rectification circuits.

This diode is housed in a DO-41 through-hole package, making it durable, easy to solder, and suitable for both prototyping and permanent installations.

Features

  • Schottky barrier diode with low forward voltage drop
  • High efficiency and reduced power dissipation
  • Fast switching speed
  • Ideal for low-voltage and high-frequency applications
  • Easy cathode identification with grey band marking
  • Reliable and rugged DO-41 through-hole package

Specifications

  • Diode Type: Schottky Barrier Rectifier
  • Maximum Average Forward Current: 1A
  • Peak Surge Current: 25A
  • Maximum Reverse Voltage: 40V
  • Forward Voltage Drop: ~0.45V (at 1A)
  • Reverse Leakage Current: Low
  • Operating Temperature Range: -55°C to +125°C
  • Package Type: DO-41

Applications

  • Reverse polarity protection
  • Switch-mode power supplies (SMPS)
  • DC-DC converters
  • Low-voltage rectifier circuits
  • Solar power systems
  • Battery protection and charging circuits