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IC High Power Switch BTS442E2

IC High Power Switch BTS442E2

This device is an N-channel vertical power FET integrated with a charge pump, ground-referenced CMOS-compatible input, and diagnostic feedback, built on Infineon’s Smart SIPMOS® chip-on-chip technology. It provides embedded protective functions and is designed to replace electromechanical relays and discrete switching circuits.
21.00 AED 21.00 AED Tax Included
21.00 AED Tax Included

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Features

  • Overload protection
  • Current limitation
  • Short-circuit protection
  • Thermal shutdown
  • Overvoltage protection (including load dump)
  • Fast demagnetization of inductive loads
  • Reverse battery protection
  • Undervoltage and overvoltage shutdown with auto-restart and hysteresis
  • Open-drain diagnostic output
  • Open-load detection in ON-state
  • CMOS-compatible input
  • Loss of ground and loss of Vbb protection
  • Electrostatic discharge (ESD) protection
  • Green product (RoHS compliant)
  • AEC qualified

Specifications

Item Attribute Value
Product Category Power Switch ICs - Power Distribution
Type High Side
Number of Outputs 1 Output
Output Current 21 A
Current Limitation 70 A
On Resistance (Max) 18 mΩ
Switch-On Time (Max) 350 µs
Shutdown Time (Max) 130 µs
Operating Supply Voltage 4.5 V to 42 V
Operating Temperature Range -40°C to +150°C
Installation Type SMD / SMT
Package TO-263-5 (D²PAK-5)
Packing Cut Tape / Reel
Product Power Switches
Trademark Infineon Technologies
Moisture Sensitive Yes
Power Dissipation (Pd) 167 W
Subcategory Switch ICs
Supply Voltage (Max) 42 V
Supply Voltage (Min) 4.5 V

Applications

  • Microcontroller-compatible power switch with diagnostic feedback for 12V and 24V DC grounded loads
  • Control of resistive, inductive, and capacitive loads
  • Replacement for electromechanical relays and discrete protection circuits