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Transistor PNP 2N5401

Transistor PNP 2N5401

The 2N5401 is a PNP transistor designed for high-voltage, low-current applications. It is commonly used in circuits like telephone systems or as a simple switching device for high-voltage loads. This transistor is cost-effective, easy to use, and suitable for both switching and amplification tasks.
BJT PNP
1.05 AED 1.05 AED (Tax included)

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Specifications

  • Pb−Free package
  • High collector breakdown voltage
  • DC Current Gain (hFE): Up to 100
  • Maximum Collector-Emitter Voltage (VCE): 150V
  • Maximum Collector Current (IC): 600mA
  • Maximum Collector-Base Voltage (VCB): 160V
  • Maximum Base-Emitter Voltage (VBE): 5V
  • Operating Temperature Range: -55ºC to +150ºC
  • Maximum Power Dissipation: 0.62W

Applications

  • General-purpose switching and amplification
  • Telephony applications
  • High-voltage circuits