Transistor MOSFET N-Channel IRF3205
The IRF3205 is a high-current N-Channel MOSFET designed for switching applications. It can handle currents up to 110A and voltages up to 55V, making it an excellent choice for power-intensive projects. With a low on-resistance of just 8.0mΩ, the IRF3205 minimizes power loss, making it suitable for applications like inverters, motor speed control, and DC-DC converters. While its high threshold voltage makes it less ideal for direct control by embedded systems, it is still a reliable and cost-effective component for various switching circuits.
Package Includes
- 1 x IRF3205 N-Channel Power MOSFET
Features
- High continuous drain current of up to 110A (VGS = 10V)
- Low on-resistance of 8.0mΩ for efficient power management
- Supports drain-to-source voltages up to 55V
- ±20V gate-to-source voltage tolerance
- Compact and commonly used TO-220 package
- High reliability in switching applications with a rise time of 101ns
Specifications
- Type: N-Channel Power MOSFET
- Maximum Drain Current (ID): 110A
- Drain-to-Source Breakdown Voltage (VDS): 55V
- Gate Threshold Voltage (VGS): Minimum 2V
- Gate-Source Voltage (VGS): ±20V
- On-Resistance (RDS(ON)): 8.0mΩ
- Rise Time: 101ns
- Package Type: TO-220
Applications
- Switching applications
- Boost converters
- DC choppers
- Solar inverters
- Motor speed control
Pinout
| Pin Number | Name | Description |
|---|---|---|
| 1 | Gate | Controls the MOSFET's biasing |
| 2 | Drain | Current flows into this terminal |
| 3 | Source | Current flows out from this terminal |
Features
- High continuous drain current of up to 110A (VGS = 10V)
- Low on-resistance of 8.0mΩ for efficient power management
- Supports drain-to-source voltages up to 55V
- ±20V gate-to-source voltage tolerance
- Compact and commonly used TO-220 package
- High reliability in switching applications with a rise time of 101ns
Specifications
- Type: N-Channel Power MOSFET
- Maximum Drain Current (ID): 110A
- Drain-to-Source Breakdown Voltage (VDS): 55V
- Gate Threshold Voltage (VGS): Minimum 2V
- Gate-Source Voltage (VGS): ±20V
- On-Resistance (RDS(ON)): 8.0mΩ
- Rise Time: 101ns
- Package Type: TO-220
Applications
- Switching applications
- Boost converters
- DC choppers
- Solar inverters
- Motor speed control
Pinout
| Pin Number | Name | Description |
|---|---|---|
| 1 | Gate | Controls the MOSFET's biasing |
| 2 | Drain | Current flows into this terminal |
| 3 | Source | Current flows out from this terminal |