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Transistor MOSFET P-Channel IRF4905

This is a P-Channel HEXFET Power MOSFET available in a TO-220AB package and designed using advanced process technology. It is primarily used for fast switching operations and offers ultra-low on-resistance. The device features three terminals — Gate, Drain, and Source — with the Gate controlling current flow between the other two. The channel between Source and Drain is voltage-dependent and controlled via the Gate. This makes the MOSFET suitable for high-performance and high-efficiency applications in both industrial and commercial settings.

Package Includes:

  • 1 x P-Channel HEXFET Power MOSFET (TO-220AB)

5.25 AED 5.25 AED Tax Included
5.25 AED Tax Included

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MOSFET

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Specifications:

  • Dynamic DV/DT Rating
  • Advanced Process Technology
  • P-Channel Type
  • Fast Switching
  • Operating Temperature: Up to 175°C
  • Fully Avalanche Rated
  • Ultra-Low On-Resistance
  • Package: TO-220AB

Applications:

  • Commercial and Industrial Applications
  • Fast Switching Circuits
  • Signal Amplification