Features
- N-channel enhancement-mode power MOSFET
- Logic-level gate drive
- Low on-state resistance
- Fast switching performance
- Fully avalanche-rated
- Dynamic dv/dt rating
- Through-hole TO-220 package
Principle of Operation
The IRLZ44NPBF controls current between its drain and source terminals according to the voltage applied to its gate. As a logic-level MOSFET, it can be driven by suitable low-voltage control circuits, subject to the required gate voltage and current ratings. It is commonly used as an electronic switch for DC loads.
Applications
- DC motor and actuator control
- LED and lighting control
- Power switching circuits
- Battery-powered electronics
- DC load control using microcontrollers
- Power converters and switching circuits
Pinout
For the standard TO-220 package, viewed from the front with the printed face toward you and the leads pointing downward:
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
The metal tab is electrically connected to the Drain. Check the manufacturer's datasheet before mounting the device to a heatsink or conductive surface.
Wiring
- Connect the Gate to the control signal through a suitable gate-drive circuit.
- Connect the Source to the circuit's reference or return path, as required by the switching configuration.
- Connect the Drain to the load according to the circuit design.
- Use a suitable gate resistor and, where needed, a gate-to-source pull-down resistor.
- For inductive loads such as motors or relays, provide appropriate flyback protection.
- Use adequate heatsinking when power dissipation requires it.
Specifications
- Part Number: IRLZ44NPBF
- Transistor Type: N-Channel HEXFET Power MOSFET
- Package: TO-220
- Drain-to-Source Voltage (VDSS): 55 V
- Continuous Drain Current (ID): Up to 47 A under specified datasheet conditions
- Drain-to-Source On-Resistance (RDS(on)): Approximately 0.022 Ω under specified gate-drive conditions
- Gate Drive: Logic-level; on-resistance depends on the applied gate-to-source voltage
- Operating Temperature: Up to 175°C junction temperature
- Avalanche Rating: Fully avalanche-rated
Note: The maximum current and temperature ratings depend on operating conditions, case temperature, cooling, and safe operating limits. Do not assume the MOSFET can carry 47 A continuously without a suitable thermal design.
Resources
Features
- N-channel enhancement-mode power MOSFET
- Logic-level gate drive
- Low on-state resistance
- Fast switching performance
- Fully avalanche-rated
- Dynamic dv/dt rating
- Through-hole TO-220 package
Principle of Operation
The IRLZ44NPBF controls current between its drain and source terminals according to the voltage applied to its gate. As a logic-level MOSFET, it can be driven by suitable low-voltage control circuits, subject to the required gate voltage and current ratings. It is commonly used as an electronic switch for DC loads.
Applications
- DC motor and actuator control
- LED and lighting control
- Power switching circuits
- Battery-powered electronics
- DC load control using microcontrollers
- Power converters and switching circuits
Pinout
For the standard TO-220 package, viewed from the front with the printed face toward you and the leads pointing downward:
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
The metal tab is electrically connected to the Drain. Check the manufacturer's datasheet before mounting the device to a heatsink or conductive surface.
Wiring
- Connect the Gate to the control signal through a suitable gate-drive circuit.
- Connect the Source to the circuit's reference or return path, as required by the switching configuration.
- Connect the Drain to the load according to the circuit design.
- Use a suitable gate resistor and, where needed, a gate-to-source pull-down resistor.
- For inductive loads such as motors or relays, provide appropriate flyback protection.
- Use adequate heatsinking when power dissipation requires it.
Specifications
- Part Number: IRLZ44NPBF
- Transistor Type: N-Channel HEXFET Power MOSFET
- Package: TO-220
- Drain-to-Source Voltage (VDSS): 55 V
- Continuous Drain Current (ID): Up to 47 A under specified datasheet conditions
- Drain-to-Source On-Resistance (RDS(on)): Approximately 0.022 Ω under specified gate-drive conditions
- Gate Drive: Logic-level; on-resistance depends on the applied gate-to-source voltage
- Operating Temperature: Up to 175°C junction temperature
- Avalanche Rating: Fully avalanche-rated
Note: The maximum current and temperature ratings depend on operating conditions, case temperature, cooling, and safe operating limits. Do not assume the MOSFET can carry 47 A continuously without a suitable thermal design.