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Transistor MOSFET HEXFET IRLZ44NPBF TO220

The IRLZ44NPBF is a new generation HEXFET that uses advanced processing techniques to achieve the lowest possible on-resistance per silicon area. With its fast switching speed and rugged design, this HEXFET Power MOSFET provides high efficiency and reliability, making it suitable for a wide range of applications.

Package Contents:

  • 1 x High Power Low Gate MOSFET N-Channel IRLZ44NPBF TO-220

9.45 AED 9.45 AED Tax Included
9.45 AED Tax Included

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MOSFET

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Specifications:

  • Type: N-Channel Field-Effect Transistor (MOSFET)
  • Package Type: Through-Hole TO-220
  • Gate Drive: Logic-Level
  • Dynamic dv/dt Rating
  • Operating Temperature: 175°C
  • Switching Speed: Fast
  • Rating: Fully Avalanche Rated
  • VDSS: 55V
  • RDS(on): 0.022Ω
  • ID: 47A