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Transistor NPN TIP41

Transistor NPN TIP41

The TIP41 is an NPN bipolar junction transistor (BJT) designed for versatile applications in electronic circuits. As a member of the TIPxx series, it offers a reliable and cost-effective solution for amplification and switching tasks. The transistor's NPN configuration makes it suitable for applications where a negative-doped semiconductor material in the emitter region is essential for proper functioning.

Package Includes:

  • 1 x TIP41 NPN bipolar junction transistor (BJT)

4.50 AED 4.50 AED Tax Included
4.50 AED Tax Included

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BJT NPN
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Features:

  1. Voltage Ratings:
    • Collector-Emitter Voltage (VCE): Up to 100 volts.
    • Collector-Base Voltage (VCB): 100 volts.
    • Emitter-Base Voltage (VEB): 5 volts.
  2. Current Handling: Collector Current (IC): Up to 6 amperes.
  3. Power Dissipation: Total Power Dissipation (Ptot): 65 watts.
  4. Amplification Characteristics: Gain (hFE): 15–75.
  5. Frequency Response: Transition Frequency (fT): 3 MHz.
  6. Temperature Range: -65 to +150°C.

Maximum Ratings:

Symbol Rating Parameter
VCBO 100 V Voltage across collector and base
VCEO 100 V Voltage across collector and emitter
VEBO 5 V Voltage across emitter and base
IC 6 A Collector current (DC)
ICM 10 A Collector current (pulse)
IB 3 A Base current
Pc 65 W Power dissipation at collector (TC=25°C)
TJ 150°C Junction temperature

Pin Configuration:

  • Emitter (E)
  • Base (B)
  • Collector (C)

TIP41 NPN - TechTronik

Electrical Characteristics:

Symbol Value Parameter
ICEO 0.7 mA Collector cut-off current
IEBO 1 A Emitter cut-off current
ICES 0.4 mA Collector cut-off current
VCEO 100 V Collector-Emitter voltage
VCE 1.5 V Collector-Emitter voltage drop
VBE 2 V Base-Emitter voltage
hFE 75 DC current gain